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Forsíða

Forsíða

Einar Örn Sveinbjörnsson - Professor

Einar Örn Sveinbjörnsson

–

School of Engineering and Natural Sciences

Einar Örn Sveinbjörnsson

Professor

Location
VR-3 / V03-102
Phone
525 - 5153
Email
einars [at] hi.is

Unit
Faculty of Physical Sciences
Website
http://uni.hi.is/einars

Published works

2023

The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layersAPL Materials
Observations of very fast electron traps at SiC/high-κ dielectric interfacesAPL Materials
Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidationAIP Advances

2022

Detection of near-interface traps in NO annealed 4H-SiC metal oxide semiconductor capacitors combining different electrical characterization methodsJournal of Applied Physics
Mg-doping and free-hole properties of hot-wall MOCVD GaNJournal of Applied Physics

2021

A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurementsJournal of Applied Physics

2020

Near-Interface Trap Model for the Low Temperature Conductance Signal in SiC MOS Capacitors With Nitrided Gate OxidesIEEE Transactions on Electron Devices

2019

Electrical characterization of high k-dielectrics for 4H-SiC MIS devicesMaterials Science in Semiconductor Processing
Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN InterlayerIEEE Transactions on Electron Devices
Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVDSolid-State Electronics
Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiCMaterials Science Forum
CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayersJournal of Applied Physics

Keywords for Specialisation:

Physics of semiconductor devices

Wide bandgap semiconductor technologies

Defects in semiconductor devices

Electrical properties of graphene