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Einar Baldur Þorsteinsson - Assistant

Einar Baldur Þorsteinsson

–

School of Engineering and Natural Sciences

Einar Baldur Þorsteinsson

Assistant

Location
VR-3
Email
eth44 [at] hi.is

Unit
The Institute of Physical Sciences, Physics Division

Published works

2023

Magnetic ordering and magnetocrystalline anisotropy in epitaxial Mn2GaC MAX phase thin filmsPhysical Review Materials
Room temperature ferromagnetism in the nanolaminated MAX phase (Mn1−xCrx)2GaCAPL Materials

2022

Reversible exchange bias in epitaxial V₂O₃/Ni hybrid magnetic heterostructuresJournal of Physics: Condensed Matter
Structural morphology and electrical transitions of V $_{2}$ O $_{3}$ thin films grown on SiO $_{2}$ /Si by high power impulse magnetron sputteringThin Solid Films

2021

Strained interface layer contributions to the structural and electronic properties of epitaxial V₂O₃ filmsApplied Physics Letters
Structural and electrical properties of V₂O₃ thin films on c-plane Al₂O₃ fabricated by reactive-HiPIMS and dcMS techniquesJournal of Physics D: Applied Physics
Controlling metal–insulator transitions in reactively sputtered vanadium sesquioxide thin films through structure and stoichiometryScientific Reports

2020

Metal-insulator transition in crystalline V2O3 thin films probed at atomic-scale using emission Mössbauer spectroscopyThin Solid Films

2018

Electrical characterization of amorphous Al₂O₃ dielectric films on n-type 4H-SiCAIP Advances
Electromagnetic Functionalization of Wide-Bandgap Dielectric Oxides by Boron Interstitial DopingAdvanced Materials
Tuning metal-insulator transitions in epitaxial V₂O₃ thin filmsApplied Physics Letters

2016

Epitaxial and textured TiN thin films grown on MgO(1 0 0) by reactive HiPIMS: the impact of charging on epitaxial to textured growth crossoverJournal of Physics D: Applied Physics
Protection of Si photocathode using TiO2 deposited by high power impulse magnetron sputtering for H2 evolution in alkaline mediaSolar Energy Materials and Solar Cells

2014

Recrystallization of Highly-Mismatched Be_xZn_1–xO Alloys: Formation of a Degenerate InterfaceACS Applied Materials & Interfaces
Carrier Mobility as a Function of Temperature in as-Grown and H-Intercalated Epitaxial Graphenes on 4H-SiCMaterials Science Forum